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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W DESCRIPTION
RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
*High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz *High Efficiency: 43%min. (941MHz) *No gate protection diode
INDEX MARK [Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLICATION
For output stage of high power amplifiers in 941MHz band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
0.7+/-0.1
UNIT:mm DETAIL A NOTES: 1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS 40 -5 to +10 73 1.4 3 150 -40 to +125 1.7 UNIT V V W W A
C C C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=941MHz , VDD=7.2V Pin=0.7W,Idq=1.0A VDD=9.5V,Po=5.5W(Pin Control) f=941MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 0.5 5.5 43 LIMITS TYP MAX. 10 1 2.5 6 No destroy UNIT uA uA V W % -
VSWRT Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
RD05MMP1
MITSUBISHI ELECTRIC 1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Vgs-Ids CHARACTERISTICS 8
Ta=+25C Vds=10V Ids
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TYPICAL CHARACTERISTICS
60 CHANNEL DISSIPATION Pch(W 50 40 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 0 0 1 2 3 Vgs(V) 4 5
On PCB with Termal sheet and Heat-sink
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*PCB: Glass epoxy (t=0.8 mm) Thermal sheet: GELTEC COOH-4000(0.5)
6 Ids(A),gm(S)
4
GM
2
Vds-Ids CHARACTERISTICS 9 8 7 6 Ids(A) 5 4 3 2 1 0 0 1 2 3 4 5 Vds(V) 6 7 8 9
Vgs=3.0V Vgs=3.5V Vgs=4.0V Ta=+25C Vgs=5.0V
Vds VS. Ciss CHARACTERISTICS 160 140
Vgs=4.5V Ta=+25C f=1MHz
120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Vds VS. Coss CHARACTERISTICS 160 140 120 Coss(pF) Crss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD05MMP1
MITSUBISHI ELECTRIC 2/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Pin-Po CHARACTERISTICS @f=941MHz 80
Ta=25C f=941MHz Vdd=7.2V Idq=1.0A d
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz 20 40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=941MHz Vdd=7.2V Idq=1.0A Po
80 15 Pout(W) , Idd(A) 60 d(%)
70 60 50
30
20
Gp
40
10
Po
40 30
10
20
5
Idd
20 10 0 1.5
0 5 10 15 20 25 Pin(dBm) 30 35
0
0 0.0 0.5 Pin(W) 1.0
Vdd-Po CHARACTERISTICS @f=941MHz 10
Ta=25C f=941MHz Pin=0.7W Idq=1.0A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTORISTICS 2 5 8 Vds=10V Tc=-25~+75C 6 Ids(A),gm(S) -25C
+25C
+75C
8 6
4 3
Po(W)
Idd(A)
4
4 2
Idd
2 1
2
0 4 6 8 Vdd(V) 10 12
0
0 0 1 2 Vgs(V) 3 4 5
RD05MMP1
MITSUBISHI ELECTRIC 3/7
1st Jun. 2006
d(%)
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TEST CIRCUIT (f=941MHz)
Vgg
C1 W 19mm 12pF 7.5mm RD05MMP1 941MHz 1.5mm 1.0mm 1.0mm 1.0mm 120pF 6pF 12pF 10pF 7pF 10pF 19mm W
C2
22uF,50V
4.7k Ohm 27.5mm RF-in
L1 13mm 23.0mm RF-out 120pF
4pF
Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm W:Line width=1.0mm
L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter) C1,C2:100pF,1000pF in parallel
RD05MMP1
MITSUBISHI ELECTRIC 4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
S22 (ang) -3.4 -5.0 -6.5 -6.6 -7.1 -8.5 -8.9 -8.7 -8.2 -3.2 -4.3 -3.6 -0.8 2.0 7.3 10.5 16.6 19.9 25.6 30.6 35.9 40.4 46.3 49.2 51.0 57.5 58.5 60.4 62.2 67.1 67.9 68.4 67.0 64.2 52.9 51.8 61.8 (mag) 0.806 0.817 0.810 0.817 0.822 0.835 0.841 0.838 0.840 0.849 0.858 0.868 0.869 0.868 0.874 0.880 0.886 0.893 0.893 0.897 0.901 0.908 0.911 0.909 0.915 0.916 0.917 0.921 0.925 0.924 0.923 0.921 0.922 0.919 0.906 0.920 0.933 (ang) -171.5 -172.9 -174.2 -174.7 -175.0 -175.1 -175.3 -175.8 -176.2 -176.4 -176.8 -177.0 -177.4 -177.5 -177.8 -178.2 -178.7 -179.1 -179.0 -179.4 -179.9 179.6 179.2 179.0 178.6 178.4 177.9 177.4 177.0 176.7 176.6 176.3 175.5 175.0 175.4 176.6 176.0
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.841 0.845 0.846 0.848 0.848 0.852 0.858 0.861 0.866 0.872 0.877 0.878 0.880 0.886 0.891 0.897 0.900 0.904 0.905 0.907 0.913 0.918 0.920 0.920 0.925 0.925 0.927 0.931 0.929 0.936 0.936 0.935 0.935 0.933 0.938 0.943 0.943 (ang) -169.5 -171.5 -172.4 -173.3 -173.7 -174.5 -174.9 -175.2 -175.3 -175.5 -175.5 -176.2 -176.6 -177.1 -177.2 -177.2 -177.3 -177.6 -178.1 -178.6 -178.9 -178.9 -178.9 -179.1 -179.5 179.8 179.5 179.2 179.3 179.2 179.0 178.5 178.1 177.9 177.8 177.8 177.5 (mag) 7.706 6.148 5.024 4.240 3.669 3.227 2.856 2.543 2.279 2.068 1.886 1.735 1.584 1.456 1.343 1.249 1.164 1.086 1.010 0.945 0.889 0.833 0.786 0.741 0.698 0.660 0.625 0.595 0.565 0.537 0.513 0.488 0.469 0.446 0.426 0.404 0.388 S21 (ang) 82.9 78.7 75.0 72.0 69.4 66.5 63.6 60.8 58.6 56.5 54.1 51.5 49.3 47.4 45.9 44.1 42.2 40.3 38.7 37.2 35.8 34.6 33.2 31.9 30.6 29.4 28.3 27.1 26.3 25.4 24.6 23.6 22.6 21.7 20.3 20.3 19.9 (mag) 0.020 0.020 0.019 0.018 0.017 0.017 0.017 0.016 0.015 0.014 0.013 0.013 0.012 0.011 0.011 0.011 0.010 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.015 0.016 0.017 0.019 0.020 0.023 0.024 0.019 0.019 S12
RD05MMP1
MITSUBISHI ELECTRIC 5/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
S22 (ang) 4.3 2.9 3.3 4.7 8.8 4.2 7.9 9.1 11.5 13.3 18.1 16.1 20.8 25.7 26.7 30.8 33.2 35.6 38.7 42.5 45.7 46.2 52.5 53.1 55.3 56.8 59.3 59.2 62.2 63.6 64.2 65.1 66.8 66.6 65.2 67.9 68.8 (mag) 0.869 0.865 0.865 0.872 0.873 0.875 0.874 0.869 0.872 0.882 0.884 0.886 0.883 0.883 0.886 0.892 0.893 0.894 0.896 0.898 0.902 0.906 0.906 0.906 0.905 0.908 0.911 0.916 0.916 0.921 0.918 0.917 0.921 0.923 0.928 0.930 0.926 (ang) -176.3 -176.9 -177.5 -177.9 -178.3 -178.5 -178.6 -178.8 -178.9 -179.2 -179.4 -179.5 -179.3 -179.6 -179.7 180.0 179.9 179.8 179.7 179.6 179.2 179.1 179.0 179.1 178.8 178.5 178.1 177.9 178.0 178.1 177.9 177.4 177.0 176.8 176.9 177.3 177.0
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.878 0.884 0.880 0.877 0.879 0.888 0.888 0.884 0.884 0.891 0.893 0.897 0.897 0.896 0.902 0.903 0.906 0.905 0.906 0.910 0.914 0.915 0.916 0.917 0.919 0.921 0.925 0.924 0.926 0.927 0.929 0.929 0.931 0.930 0.928 0.932 0.937 (ang) -174.2 -175.6 -176.9 -177.4 -177.7 -178.2 -178.7 -179.1 -179.2 -179.6 -179.7 179.8 179.7 179.6 179.3 178.9 178.7 178.5 178.4 178.2 177.9 177.5 177.3 177.3 177.2 176.9 176.6 176.5 176.3 176.1 175.8 175.6 175.5 175.2 175.2 174.8 174.8 (mag) 7.474 6.046 4.919 4.153 3.636 3.246 2.912 2.598 2.351 2.152 1.995 1.849 1.708 1.580 1.475 1.388 1.308 1.222 1.152 1.086 1.030 0.978 0.928 0.877 0.832 0.798 0.759 0.725 0.694 0.661 0.634 0.611 0.585 0.562 0.539 0.518 0.496 S21 (ang) 85.7 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1 50.6 49.4 48.2 46.6 45.1 43.8 43.0 41.7 40.5 39.2 38.3 37.2 36.5 35.5 34.3 33.4 32.6 31.9 31.1 (mag) 0.014 0.014 0.014 0.013 0.013 0.013 0.013 0.012 0.012 0.012 0.012 0.011 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.013 0.013 0.014 0.015 0.015 0.015 0.016 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.022 0.022 S12
RD05MMP1
MITSUBISHI ELECTRIC 6/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD05MMP1
MITSUBISHI ELECTRIC 7/7
1st Jun. 2006

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